logo

LDTBG12GPLT1G Datasheet, Leshan Radio Company

LDTBG12GPLT1G Datasheet, Leshan Radio Company

LDTBG12GPLT1G

datasheet Download (Size : 321.69KB)

LDTBG12GPLT1G Datasheet

LDTBG12GPLT1G transistor

bias resistor transistor.

LDTBG12GPLT1G

datasheet Download (Size : 321.69KB)

LDTBG12GPLT1G Datasheet

LDTBG12GPLT1G Features and benefits

LDTBG12GPLT1G Features and benefits

1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA) 3) Built-in zener diode gives strong protection against rev.

LDTBG12GPLT1G Application

LDTBG12GPLT1G Application

Driver zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500m.

Image gallery

LDTBG12GPLT1G Page 1 LDTBG12GPLT1G Page 2 LDTBG12GPLT1G Page 3

TAGS

LDTBG12GPLT1G
Bias
Resistor
Transistor
Leshan Radio Company

Manufacturer


Leshan Radio Company

Related datasheet

LDTBG12GPLT3G

LDTBG12GPT1G

LDTBG12GPT3G

LDTBG12GPWT1G

LDTBG12GPWT3G

LDTB113EET1G

LDTB113EET3G

LDTB113ELT1G

LDTB113ELT3G

LDTB113EWT1G

LDTB113EWT3G

LDTB113ZET1G

LDTB113ZET3G

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts